High-Energy Ion Implantation (MeV)

We offer MeV ion implantation with a wide range of ion species, including boron, phosphorus, arsenic, carbon, nitrogen, hydrogen, helium, and additional ions subject to technical feasibility.

MeV ion implantation is particularly suitable when ions need to be introduced into deeper regions of a material. The high ion energies enable deeper implantation profiles for the targeted modification of doping or defect profiles. The appropriate ion species and energy are selected according to the specific application and required target depth.

For MeV ion implantation, typical fluences range from approximately 1E10 cm⁻² to several E13 cm⁻². For standard ion implantation, typical fluences range from approximately 1E10 cm⁻² to 1E16 cm⁻². Higher fluences are subject to individual technical and economic feasibility assessment.

Typical ion species include H, He, B, P, N, C, Al, Mg, Ar, Xe, Kr, As, Te, Er, and many other elements from the periodic table, subject to technical feasibility.

For optimal process planning, we consider the maximum allowable process temperature of your sample as part of our technical feasibility assessment. Please specify this temperature when submitting your inquiry. Implantation is performed without active cooling or heating.