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High-energy ion implantation and irradiation services

HZDR Innovation GmbH has provided high-energy ion implantation, ion irradiation, and electron irradiation services since 2011. We perform ion implantation and ion irradiation processes to defined specifications for semiconductors, power semiconductors, optical and optoelectronic components, engineering materials, semi standard wafers, wafers and samples non-standard geometries.

 

Our focus is on reliable processing to customer specifications: clearly agreed process parameters, documented order execution, confidential sample handling, and many years of experience working with customers in Germany and internationally.

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More Information

Learn more about our ion implantation service

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Technical capabilities

ParameterDescription
MeV H/He irradiationH ions up to approximately 8 MeV and He ions up to approximately 14 MeV, depending on the specific process requirements
MeV ion implantatione.g., B, P, As, C, N, and other ion species, subject to technical feasibility review
Materials and substratesSi, SiC, Ge, GaAs, GaN
Standard ion implantation30 keV to 500 keV
Wafer sizes2″, 3″, 100 mm, 125 mm, 150 mm and 200 mm
Laboratory samples and non-standard geometriesSubject to technical feasibility review
LocationsDresden (DE) and Trnava (SK), each with two MeV irradiation lines
Electron irradiation10 MeV, through qualified partners
Order and process terms and conditionsNDA, product traceability, segregated storage and processing, and an order summary including process parameters
HZDR Innovation High-Energy Ion Implantation
HZDR Innovation High-Energy Ion Implantation

Typical applications

MeV ion implantation

 

  • Targeted defect engineering in power semiconductors for carrier lifetime control
  • Formation of deep dopant profiles

 

Standard ion implantation (30 keV to 500 keV)

 

  • Doping implantation
  • Material modification
  • Implantation processes for sensor and MEMS applications

 

MeV electron irradiation

 

  • Targeted defect engineering for power semiconductors to control the lifetime of charge carriers
High-energy ion implantation
HZDR Innovation contact High-energy ion implantation

FREQUENTLY ASKED QUESTIONS (FAQ)

What ion implantation services does HZDR Innovation GmbH offer?

Our services range from standard ion implantation at 30 keV to 500 keV to high-energy MeV ion implantation, including H/He ion irradiation. We process wafers, laboratory samples, and non-standard geometries using a wide range of ion species. We tailor the process parameters to your specific application.

Are you ISO 9001 certified?

HZDR Innovation GmbH has been ISO 9001 certified since 2015. The scope of certification is: “Execution of production orders in the Ion Technology business segment.” HZDR Innovation GmbH is certified by TÜV NORD. The certificate is available as a PDF.

Can projects be carried out under a non-disclosure agreement (NDA)?

Confidentiality is our top priority. Upon request, we can work under a non-disclosure agreement (NDA) and maintain strict confidentiality regarding your process parameters, samples, project data, and technical know-how.

Do you have experience working with international clients?

We have many years of experience working with customers in the EU as well as in China, other Asian markets, the United States, and other non-EU countries. We communicate with our customers in both German and English.

Can you assist with exporting and importing?

We have extensive experience with import/export procedures and inward processing for a wide range of component types. The specific procedures depend on the sample material, destination country, shipping route, and applicable regulatory requirements.


Ready to implant?

Whether you need a standard implant,
a high-energy irradiation process,
or a custom solution –
talk to us about your application.

 

Dr. Roman Böttger

Chief Operating Officer

Tel.: +49 351 260 2873

 

Or send an email
to our sales team:

sales@hzdri.de