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For the targeted modification of semiconductors, materials, and functional surfaces, we offer standard ion implantation in the energy range from 30 keV to 500 keV. We can process wafers up to 200 mm as well as laboratory samples, individual chips, and components with custom geometries.
The process is suitable for both research and development applications and industrial processes. Depending on the ion species, substrate, and desired result, the implantation parameters are individually tailored to the specific application.
The available energy range extends from 30 keV to 500 keV. Typical fluences range from approximately 1E10 cm⁻² to 1E16 cm⁻².
Process parameters outside these ranges can also be assessed for technical feasibility. For fluences above approximately 1E16 cm⁻², the economic viability of the process becomes an important consideration. Such requirements are therefore evaluated individually.
Depending on the application, a wide variety of elements can be implanted. Typical ion species include:
H, He, B, P, N, C, Al, Mg, Ar, Xe, Kr, As, Te, and Er.
In addition, many other elements from the periodic table are generally available. The specific feasibility depends on the required ion species and process parameters and is assessed individually in advance.
We offer standard ion implantation in the energy range from 30 keV to 500 keV.
We can implant a wide range of ion species, including H, He, B, P, N, C, Al, Mg, Ar, Xe, Kr, As, Te, and Er. Many other elements from the periodic table are also possible. We assess the technical feasibility individually for your specific application.
Typical fluences range from approximately 1E10 cm⁻² to 1E16 cm⁻². Requirements outside this range can be assessed individually. For particularly high fluences, we consider both the technical feasibility and the economic viability of the process.
In addition to wafers up to 200 mm, we can process laboratory samples, individual chips, and components with custom geometries. We assess the suitability of your substrate for the required implantation based on the material, dimensions, and required process parameters.
Annealing is not part of our service portfolio.
Do you have specific ion implantation requirements or would you like to explore the possibilities for your application? Talk to us – together, we will find the right process for your needs.
Dr. Roman Böttger
Chief Operating Officer
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