The HZDR innovation GmbH uses ion beams of the Helmholtz-Zentrum Dresden-Rossendorf in the energy range from several hundreds eV to >50 MeV for ion implantation.
Additional to the typical standard energies we are focused on applications of high energy ion implantation
- Implantation of light ions (H, He) into semiconductor devices in power electronics (power diodes, thyristors, IGBTs or power MOSFETs) to improve switching performance and reduce significantly the power loss (lifetime engineering)
- Implantation of doping elements (H, B, P, As etc.) for deep doping of devices